APT41H50B Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel Ultrafast Recovery FREDFET

160
V_GS = 10V
140
120
T_J = -55°C
100
T_J = 25°C
80
60
40
T_J = 150°C
20
0
T_J = 125°C
0
5
10
15
20
25
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
V_GS = 10V @ 21A
2.0
1.5
1.0
0.5
0
-55 -25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
60
50
T_J = -55°C
40
T_J = 25°C
T_J = 125°C
30
20
10
0
0
10
20
30
40
50
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 21A
14
12
V_DS = 100V
10
V_DS = 250V
8
6
V_DS = 400V
4
2
0
0
50
100 150 200 250
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
80
T_J = 125°C
70
V_GS= 7 &10V
6.5V
APT41H50B_S
60
50
6V
40
30
5.5V
20
5V
10
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
140
120
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
T_J = -55°C
80
T_J = 25°C
60
T_J = 125°C
40
20
0
0 12 3 4 5 6 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
C_iss
1000
100
C_oss
C_rss
10
0
100 200 300 400 500
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
140
120
100
80
T_J = 25°C
60
T_J = 150°C
40
20
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage