APT40N60JCU2 Datasheet, PDF (3/8 Pages) Advanced Power Technology – ISOTOP Boost chopper Super Junction MOSFET Power Module

APT40N60JCU2
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V_F Diode Forward Voltage
I_F = 30A
I_F = 60A
I_F = 30A
T_j = 125°C
I_RM Maximum Reverse Leakage Current
V_R = 600V
V_R = 600V
T_j = 25°C
T_j = 125°C
C_T Junction Capacitance
V_R = 200V
Reverse Recovery Time
t_rr
Reverse Recovery Time
I_F=1A,V_R=30V
di/dt =100A/µs
T_j = 25°C
T_j = 25°C
T_j = 125°C
I_RRM
Maximum Reverse Recovery Current
I_F = 30A
V_R = 400V
di/dt =200A/µs
T_j = 25°C
T_j = 125°C
Q_rr Reverse Recovery Charge
T_j = 25°C
T_j = 125°C
1.6 1.8
1.9
V
1.4
250
500
µA
44
pF
23
85
ns
160
4
A
8
130
nC
700
t_rr Reverse Recovery Time
I_F = 30A
70
ns
Q_rr Reverse Recovery Charge
V_R = 400V
T_j = 125°C
1300
nC
I_RRM Maximum Reverse Recovery Current ^{di/dt =1000A/µs}
30
A
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
CoolMos
Diode
0.43
1.21 ^°C/W
R_thJA Junction to Ambient (IGBT & Diode)
20
V_ISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T_J,T_STG Storage Temperature Range
T_L Max Lead Temp for Soldering:0.063” from case for 10 sec
-55
150
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5 N.m
Wt Package Weight
29.2
g
Typical CoolMOS Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.5
0.45
0.9
0.4
0.35 _0.7
0.3
0.25 0.5
0.2
0.15 ^0.3
0.1
0.1
0.05
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Dur ation (Seconds)
Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration
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