APT40DC60HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP SiC Diode Full Bridge Power Module

APT40DC60HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 _0.9
0.6
0.5 ^0.7
0.4 0.5
0.3
0.3
0.2
0.1 _0.1
0 ^0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
80
T_J=25°C
60
T_J=75°C
40
T_J=175°C
T_J=125°C
20
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
800
700
600
500
400
300
200
100
0
200
Reverse Characteristics
T_J=175°C
T_J=125°C
T_J=75°C
T_J=25°C
300 400 500 600 700 800
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1600
1400
1200
1000
800
600
400
200
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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