APT40DC120HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP SiC Diode Full Bridge Power Module

APT40DC120HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.9
0.3 _0.7
0.5
0.2
0.3
0.1
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
80
T_J=25°C
60
T_J=75°C
40
T_J=125°C
20
T_J=175°C
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
Reverse Characteristics
400
300
200
T_J=75°C
100
0
400
T_J=125°C
T_J=175°C
T_J=25°C
600 800 1000 1200 1400 1600
V_R Reverse Voltage (V)
2800
Capacitance vs.Reverse Voltage
2400
2000
1600
1200
800
400
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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