APT35DL120HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP Fast Diode Full Bridge Power Module

APT35DL120HJ
Typical Performance Curve
70
60
50
40
30
20
10
0
0
Forward Characteristic of diode
T_J=125°C
T_J=125°C
T_J=25°C
0.5
1
1.5
2
2.5
V_F (V)
Energy losses vs Collector Current
5
V_CE = 600V
4
V_GE = -15V
T_J = 125°C
3
2
1
0
0 10 20 30 40 50 60 70 80
I_F (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
0.8
0.7
0.6
0.5
0.4 _0.3
0.2 _0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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