APT33N90JCCU3 Datasheet, PDF (3/5 Pages) Microsemi Corporation – ISOTOP® Buck chopper Super Junction MOSFET SiC chopper diode

APT33N90JCCU3
Thermal and package characteristics
Symbol Characteristic
Min Typ
R_thJC Junction to Case Thermal Resistance
CoolMOS
SiC Diode
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
2500
-40
Wt Package Weight
29.2
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
Max
0.43
1.65
20
150
300
1.5
Unit
°C/W
V
°C
N.m
g
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
Anode
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
Typical CoolMOS performance Curve
Operating Frequency vs Drain Current
250
200
ZVS
150 ^ZCS
V_DS=600V
D=50%
R_G=7.5Ω
T_J=125°C
T_C=75°C
100
ON resistance vs Temperature
3.0
2.5
2.0
1.5
50 _Hard
switching
0
10
15
20
25
30
I_D, Drain Current (A)
1.0
0.5
25 50 75 100 125 150
T_J, Junction Temperature (°C)
Switching Energy vs Current
2
VDS=600V
RG=7.5Ω
Eon
2 TJ=125°C
L=100µH
1
Eoff
1
0
5 10 15 20 25 30 35 40
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
3
Eoff
2
Eon
VDS=600V
1
ID=26A
TJ=125°C
L=100µH
0
5 10 15 20 25 30 35
Gate Resistance (Ohms)
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