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APT30DL60HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP Fast Diode Full Bridge Power Module
APT30DL60HJ
Typical Performance Curve
Forward Characteristic of diode
60
50
40
30
20
TJ=150°C
10
TJ=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
1
0.75
Energy losses vs Collector Current
VCE = 300V
VGE = -15V
TJ = 150°C
0.5
0.25
0
0 10 20 30 40 50 60
IF (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2.5
0.9
2 0.7
1.5 0.5
1 0.3
0.5 0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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