APT2X61DC120J Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP® SiC Diode Power Module

APT2X61DC120J
APT2X60DC120J
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25 ^0.9
0.2 0.7
0.15 0.5
0.1 _0.3
0.05 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
120
T_J=25°C
100
80
T_J=75°C
60
T_J=125°C
40
T_J=175°C
20
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
Reverse Characteristics
600
500
400
300
200
100
0
400
T_J=75°C
T_J=125°C
T_J=175°C
T_J=25°C
600 800 1000 1200 1400 1600
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
4200
3600
3000
2400
1800
1200
600
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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