APT2X51DC60J Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP® SiC Diode Power Module

APT2X51DC60J
APT2X50DC60J
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.9
0.5
0.4 ^0.7
0.3 ^0.5
0.2 0.3
0.1 0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
100
T_J=25°C
75
T_J=75°C
T_J=175°C
50
T_J=125°C
25
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
1000
800
600
400
200
Reverse Characteristics
T_J=175°C
T_J=125°C
T_J=75°C
T_J=25°C
0
200 300 400 500 600 700 800
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
2000
1500
1000
500
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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