APT2X31DC120J Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP® SiC Diode Power Module

APT2X31DC120J
APT2X30DC120J
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5 ^0.9
0.4 0.7
0.3 0.5
0.2 0.3
0.1 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
60
T_J=25°C
50
40
T_J=75°C
30
T_J=125°C
20
T_J=175°C
10
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F Forward Voltage (V)
Reverse Characteristics
300
225
150
T_J=75°C
75
0
400
T_J=125°C
T_J=175°C
T_J=25°C
600 800 1000 1200 1400 1600
V_R Reverse Voltage (V)
Capacitance vs.Reverse Voltage
2100
1800
1500
1200
900
600
300
0
1
10
100
1000
V_R Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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