APT20GS60BRDQ1 Datasheet, PDF (3/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

TYPICAL PERFORMANCE CURVES
80
V_GE = 15V
70
T_J = 25°C
60
50
T_J = 125°C
40
T_J = 150°C
30
20
10
0
012 34 56 7
V_CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
80
250µs PULSE
TEST<0.5 % DUTY
70
CYCLE
T_J = 125°C
60
T_J = 25°C
50
T_J = -55°C
40
30
20
10
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
4
I_C = 40A
3
I_C = 20A
I_C = 10A
2
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
2000
1000
C_ies
100
C_oes
C_res
10
0 100 200 300 400 500 600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
80
T_J = 125°C
70
APT20GS60B_SRDQ1(G)
V_GE = 13 & 15V _11V
60
10V
50
9V
40
30
8V
20
7V
10
6V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics
5
I_C = 50A
4
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 20A
2
I_C = 10A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
16
14
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0 20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 6, Gate Charge
40
35
30
25
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature