APT200GT60JR Datasheet, PDF (3/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
250
225
V_GE = 15V
200
T_J= 25°C
175
T_J= 125°C
150
125
T_J= 150°C
100
75
T_J= 55°C
50
25
0 _{0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5}
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
350
250μs PULSE
TEST<0.5 % DUTY
300
CYCLE
250
200
150
100
50
T_J= 25°C
T_J= 125°C
0
0
2
4
T_J= -55°C
6
8 10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 400A
3
I_C = 200A
2
I_C = 100A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
400
13/15V
12V
350
11V
300
10V
250
APT200GT60JR
200
9V
150
100
8V
50
5V
0 _{0 4 8 12 16 20 24 28 32}
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
20
I_C = 200A
T_J = 25°C
V_CE = 120V
15
V_CE = 300V
10
V_CE = 480V
5
0
0
250
500
750
1000
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
4
I_C = 400A
3
I_C = 200A
2
I_C = 100A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25
50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
250
200
150
100
50
0
25
50
75 100
125
150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature