APT19F100J Datasheet, PDF (3/4 Pages) Microsemi Corporation – 1000V, 19A, 0.46Ω Max, trr ≤270ns

80
V_GS = 10V
70
60
T_J = -55°C
50
40
T_J = 25°C
30
20
10
T_J = 125°C
T_J = 150°C
0
0
5
10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
V_GS = 10V @ 16A
2.5
2.0
1.5
1.0
0.5
0-55 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
45
40
35
T_J = -55°C
30
T_J = 25°C
25
T_J = 125°C
20
15
10
5
0
0
4
8
12
16
20
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 16A
14
12
V_DS = 200V
10
V_DS = 500V
8
6
V_DS = 800V
4
2
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
30
T_J = 125°C
25
20
V_GS= 6, 7, 8 & 9V
APT19F100J
15
5V
10
5
4.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
120
100
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
T_J = -55°C
60
T_J = 25°C
40
T_J = 125°C
20
0
0
20,000
10,000
1 2 3 4 56 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C_iss
1000
C_oss
100
C_rss
10
0
200 400 600 800 1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
120
100
80
60
T_J = 25°C
40
T_J = 150°C
20
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage