APT14M100B_09 Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

45
V_GS = 10V
40
35
T_J = -55°C
30
25
T_J = 25°C
20
15
10
T_J = 125°C
5
T_J = 150°C
0
0
5
10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
V_GS = 10V @ 7A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
20
18
16
T_J = -55°C
14
T_J = 25°C
12
T_J = 125°C
10
8
6
4
2
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 7A
14
12
V_DS = 200V
10
V_DS = 500V
8
6
V_DS = 800V
4
2
0
0 20 40 60 80 100 120 140 160 180
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
16
T_J = 125°C
14
12
APT14M100B_S
V_GS= 6, 7, 8 & 9V
10
8
6
5V
4
2
4.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
50 ^{@ <0.5 % DUTY CYCLE}
40
T_J = -55°C
30
T_J = 25°C
20
T_J = 125°C
10
0
0
6,000
1 2 3 4 56 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C_iss
1000
100
C_oss
10
C_rss
0
200 400 600 800 1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
60
50
40
T_J = 25°C
30
T_J = 150°C
20
10
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage