APT100GT60JRDL Datasheet, PDF (3/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

Typical Performance Curves
200
V_GE = 15V
180
160
140
T_C = 25°C
120
T_C = 125°C
100
80
T_C = -55°C
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
200
250µs PULSE
TEST<0.5 % DUTY
180
CYCLE
160
T_J = -55°C
140
120
100
80
T_C = 25°C
60
T_C = 125°C
40
20
0
0
2
4
6
8
10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.5
4.0
I_C = 200A
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.5
3.0
2.5
I_C = 100A
2.0
1.5
I_C = 50A
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT100GT60JRDL
300
12, 13, &15V
10V
250
9V
200
150
8V
100
7V
50
6V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 100A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
100 200 300 400
500
GATE CHARGE (nC)
FIGURE 4, Gate Charge
4
3.5
I_C = 200A
3
2.5
I_C = 100A
2
1.5
I_C = 50A
1
0.5 ^{VGE = 15V.}
250 µs
PULSE TEST <0.5 %
DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature