2N5031 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5031
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
G
U max
Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
-
12
-
dB
MAG
Maximum Available Gain
IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
-
12.4
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
∠φ
.610
-137
.659
-161
.671
-171
.675
-178
.677
176
.678
172
.677
168
.679
184
.678
160
.682
156
S21
|S21|
∠φ
23.8
116
13.2
98
9.0
89
6.8
83
5.5
77
4.6
72
4.0
68
3.5
64
3.1
60
2.8
56
S12
|S12|
∠φ
.026
46
.033
47
.040
51
.047
55
.055
58
.064
61
.073
62
.082
63
.092
64
.102
65
S22
|S22|
.522
.351
.304
.292
.293
.299
.306
.314
.322
.311
∠φ
-78
-106
-120
-128
-132
-134
-135
-136
-138
-139
MSC1303.PDF 10-25-99