VRF2933 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF POWER VERTICAL MOSFET

Dynamic Characteristics
Symbol
Parameter
Test Conditions
C_ISS
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 50V
f = 1MHz
Functional Characteristics
Symbol
Parameter
G_PS
f₁ = 30MHz, V_DD = 50V, I_DQ = 250mA, P_out = 300W
η_D
f₁ = 175MHz, V_DD = 50V, I_DQ = 250mA, P_out = 300W
ψ
f₁ = 30MHz, V_DD = 50V, I_DQ = 250mA, P_out = 300W 3:1 VSWR - All Phase Angles
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
VRF2933
Min
Typ
Max
Unit
740
400
pF
32
Min
Typ
Max Unit
20
25
dB
50
%
No Degradation in Output Power
Typical Performance Curves
55
7.5V
50
45
6.5V
40
35
6V
30
5.5V
25
20
5V
15
10
4.5V
5
4V
0
3.5V
0
5
10
15
20
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
1.0E−8
1.0E−9
C_iss
C_oss
1.0E−10
C_rss
1.0E−11
0 10
20 30
40 50 60
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
30
250μs PULSE
TEST<0.5 % DUTY
CYCLE
25
T_J= -55°C
20
T_J= 25°C
15
10
5
T_J= 125°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
100
I_DMax
10
Rds(on)
PD Max
T_J = 125°C
T_C = 75°C
1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area