UPS140E3 Datasheet, PDF (2/4 Pages) Microsemi Corporation – Schottky Barrier Rectifier

UPS140e3
Schottky Barrier Rectifier
Characteristics
Static Electrical Characteristics
Symbol
V_F(2)
I_R(2)
Parameter
Maximum forward voltage
Maximum instantaneous
reverse current
Test Conditions
T_J = 25ºC
T_J = 85ºC
I_F = 0.1 A
I_F = 1.0 A
I_F = 3.0 A
I_F = 0.1 A
I_F = 1.0 A
I_F = 3.0 A
T_J = 25ºC
V_R = 40V
V_R = 10V
C_T
Junction capacitance
V_R = 5V, f = 1MHz
(2) _{Measured with a test pulse of 380µs to minimize self-heating effect}
Thermal Characteristics
Typ
max
0.36
0.45
0.75
0.26
0.43
0.69
0.40
0.10
70
Units
V
mA
pF
Symbol
Parameter
R_ΘJC
R_ΘJA
Junction to case (bottom)
Junction to ambient⁽³⁾
(3) _{Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print}
Value
15
240
Unit
ºC/W
ºC/W
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this device under any
reverse voltage conditions. Calculations of T_J therefore must
include forward and reverse power effects. The allowable
operating T_J may be calculated from the equation:
T_J = T_{J max} = r(t)(Pf+Pr) where
r(t) = thermal impedance under given conditions.
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the de-rated allowable T_J due to reverse bias
under DC conditions only and is calculated as T_J = T_{J max}-r(t) Pr,
Where r(t)=Rthja. For other power applications further
calculations must be performed.
Copyright © 2008
www.Microsemi.com
2/4
June 2008 Rev D