UPF1N50 Datasheet, PDF (2/3 Pages) Microsemi Corporation – SURFACE MOUNT N CHANNEL MOSFET

WATERTOWN DIVISION
UPF1N50
SURFACE MOUNT N CHANNEL MOSFET
PRELIMINARY
SYMBOL
BV_DSS
V_GS(TH)2
V_GS(TH)1
R_DS(ON)1
I_DSS1
I_DSS2
I_GSS1
STATIC ELECTRICAL CHARACTERISTICS
CHARACTERISTICS / TEST CONDITIONS
UPF1N50
Min Typ Max
Drain to Source Breakdown Voltage
(VGS=0V, ID=0.25mA)
500
Gate Threshold Voltage
(VDS≥VGS, ID=1mA, TJ=37°C )
2.0
3.4
4.0
Gate Threshold Voltage
(VDS≥VGS, ID=1mA, TJ=25°C )
3.5
Drain to Source ON-State Resistance
(VGS=10V, ID=1.0A , TJ=25°C )
2.7
3.5
Zero Gate Voltage-Drain Current
(VDS=400V,VGS=0V,TJ= 25°C )
2
Zero Gate Voltage-Drain Current
(VDS=400V,VGS=0V,TJ=125°C )
250
Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 25°C )
±100
Units
Volts
Volts
Volts
Ohms
uA
uA
nA
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td
tf
V_SD
trr
Qrr
STATIC ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
TEST CONDITIONS
VGS= 0 V
VDS= 50 V
f = 1MHZ
VGS= 10 V
VDS= 0.5 VDSS
ID= 10 mA
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Resistive Switching (25°C)
VGS= 10 V, VDS= 0.5 BVDSS
ID = 20 mA
Rg = 1.6 Ω
VGS= 0 V, IS = 1 A, TJ = 25°C
IS = 1 A, dIs/dt = 100 A/us
IS = 1 A, dIs/dt = 100 A/us
Min Typ Max UNIT
200 250 pF
30 50 pF
15 20 pF
20
nC
1.0
nC
10
nC
20
ns
10
ns
30
ns
30
us
0.85 1.2 V
150 ns
0.8 uC
Copyright  2000
MSC1541.PDF 2000-08-08
Microsemi
Watertown Division
580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: [phone]
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