UM9995 Datasheet, PDF (2/3 Pages) Microsemi Corporation – ULTRA LOW MAGNETIC MRI SWITCHING DIODES

UM9995
ULTRA LOW MAGNETIC MRI SWITCHING
DIODES
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ. Max Units
Series Resistance
Rs
Total Capacitance
Ct
Parallel Resistance
Rp
Forward Voltage (Note 1) V_f
I = 100 mA
F = 100 MHz
V = 100V
F = 1MHz
V = 100 V
F = 100 MHz
I_F = 100 mA ,
Carrier Lifetime
τ
If = 10 mA
I-Region Width
W
Note: 1 Short duration test pulse used to minimize self – heating effect.
- 0.4 0.6 Ω
-
- 1.2 pF
100 - - kΩ
- 0.85 - V
2.0
µs
80
µm
ELECTRICAL PARAMETERS @25ºC (unless otherwise specified)
Ρo
θt
Flange at 25ºC
Free Air
Peak Power (1 µs @ 25ºC)
Storage Temperature
Operating Temperature
7.5 W 20ºC/W
1.5 W
-
10 kW
-65 to +150ºC
-65 to +150ºC
Copyright  2004
Rev. 0, 2004-10-15
Microsemi
Page 2