STD1LNK60Z-1_06 Datasheet, PDF (2/14 Pages) Microsemi Corporation – N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

Electrical ratings
1
Electrical ratings
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_TOT
Drain-Source Voltage (V_GS = 0)
Drain-Gate Voltage (R_GS = 20KΩ)
Gate-Source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C=100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt⁽²⁾ Peak Diode Recovery voltage slope
T_J
Operating Junction Temperature
T_stg
Storage Temperature
1. Pulse width limited by safe operating area
2. I_SD ≤0.3A, di/dt ≤200A/µs, V_DD =80%V_(BR)DSS
Value
IPAK
0.8
0.5
3.2
25
0.24
TO-92 SOT-223
600
600
± 30
0.3
0.3
0.189
1.2
3
3.3
0.25
0.26
800
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-a
R_thj-lead
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
IPAK
5
100
--
Value
Unit
TO-92 SOT-223
--
--
°C/W
120 37.87⁽¹⁾ °C/W
40
--
°C/W
275
260
°C
Table 3. Avalanche data
Symbol
Parameter
Avalanche Curent, Repetitive or Noy-Repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche Energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
0.8
60
Unit
A
mJ
2/14
Rev 7