MSAFX10N90A Datasheet, PDF (2/2 Pages) Microsemi Corporation – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAFX10N90A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
SYMBOL
BVDSS
∆BVDSS/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
trr
Qrr
CONDITIONS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
VGS = ± 20VDC, VDS = 0 TJ = 25°C
TJ = 125°C
VDS =0.8•BVDSS
TJ = 25°C
VGS = 0 V
TJ = 125°C
VGS= 10V, ID= 5 A
TJ = 25°C
ID= 10 A TJ = 25°C
ID= 5 A
TJ = 125°C
VDS ≥ 10 V; ID = 5 A
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 450 V,
ID = 5 A, RG = 2.00 Ω
VGS = 10 V, VDS = 450 V, ID = 5 A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/µs,
IF = 10 A,
di/dt = 100 A/µs,
25 C
125 C
25 C
125 C
MIN TYP.
900
0.6
2.0
1.1
2
6
12
4200
315
90
20
15
50
20
125
30
50
1
2
MAX
4.5
±100
±200
200
1000
1.1
50
50
100
50
155
45
80
1.5
250
400
UNIT
V
V/°C
V
nA
µA
Ω
S
pF
ns
nC
V
ns
µC
Notes
(1) Pulse test, t ≤300 µs, duty cycle δ≤2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.