MSAER38N10A Datasheet, PDF (2/2 Pages) Microsemi Corporation – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

MSAER38N10A
MSAFR38N10A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
SYMBOL
BVDSS
∆BVDSS/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
trr
Qrr
CONDITIONS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 1 mA
VGS = ± 20VDC, VDS = 0 TJ = 25°C
T J = 125°C
VDS =0.8•BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, ID= 24A T J = 25°C
I D= 38A T J = 25°C
I D= 24A T J = 125°C
VDS ≥ 15 V; ID = 24 A
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 50 V,
ID = 38 A, R G = 2.35 Ω
VGS = 10 V, V DS = 50V, ID = 38A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/ µs,
IF = 10 A,
di/dt = 100 A/ µs,
MSAE
MSAF
MSAE
MSAF
MSAE
MSAF
MIN TYP.
100
0.13
2.0
1.0
9
3700
1100
200
50
8
25
MAX UNIT
V
V/°C
4.0
V
±100
nA
±200
25
µA
250
0.055
Ω
0.065
S
pF
35
ns
190
170
130
125
nC
22
65
1.2
V
1.8
50
ns
500
tbd
µC
2.9
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact factory for details