M1MA174T1G Datasheet, PDF (2/8 Pages) Microsemi Corporation – Silicon Switching Diode

820 Ω
+10 V
2.0 k
100 µH ^IF
0.1 µF
DUT
50 Ω OUTPUT
PULSE
GENERATOR
M1MA174T1
0.1 µF
tr
tp
t
10%
50 Ω INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
IR
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
0.1
1.0
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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