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JANTX2N6385 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN DARLINGTON POWER SILICON TRANSISTOR
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc
2N6383
VCE = 60 Vdc
2N6384
VCE = 80 Vdc
Collector-Emitter Cutoff Current
2N6385
VCE = 40 Vdc, VBE = 1.5 Vdc
2N6383
VCE = 60 Vdc, VBE = 1.5 Vdc
2N6384
VCE = 80 Vdc, VBE = 1.5 Vdc
ON CHARACTERISTICS (3)
2N6385
Forward-Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 10 mAdc
IC = 10 Adc, IB = 0.1 Adc
Base-Emitter Voltage
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = 20 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = -IB2 = 20 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 10 Adc
Test 2
All Types
VCE = 30 Vdc, IC = 3.33 Adc
Test 3
All Types
VCE = 40 Vdc, IC = 1.5 Adc
2N6383
VCE = 60 Vdc, IC = 0.4 Adc
2N6384
VCE = 80 Vdc, IC = 0.16 Adc
2N6385
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
IEBO
ICEO
ICEX
hFE
VCE(sat)
VBE(on)
hfe
Cobo
ton
toff
Min.
Max.
5.0
Unit
mAdc
1.0
1.0
mAdc
1.0
0.3
0.3
mAdc
0.3
1,000 20,000
100
2.0
Vdc
3.0
2.8
Vdc
4.5
20
300
200
pF
2.5
µs
10
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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