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JANTX2N3743 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 30 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 20 Vdc
Collector-Emitter Saturation Voltage
IC = 30 mAdc, IB = 3.0 mAdc
IC = 10 mAdc, IB = 1.0 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 20 Vdc, IE = 0, f ≥ 0.1 MHz
Input Capacitance
VEB = 1.0 Vdc, IC = 0, f ≥ 0.1 MHz
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ≥ 1.0 s
Test 1
VCE = 20 Vdc, IC = 50 mAdc
Test 2
All Types
VCE = 100 Vdc, IC = 10 mAdc
Test 3
All Types
VCE = 300 Vdc, IC = 3.3 mAdc
2N3743
VCE = 200 Vdc, IC = 5.0 mAdc
2N4930
VCE = 250 Vdc, IC = 4.0 mAdc
2N4931
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
IEBO
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
Min.
Max.
150
Unit
ηAdc
30
40
40
50
200
30
1.2
Vdc
1.0
1.0
Vdc
1.2
2.0
8.0
30
300
15
pF
400
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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