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| JANTX2N2432A Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON LOW POWER TRANSISTOR | |||
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2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
OFF CHARACTERISTICS (conât)
Collector-Emitter Cutoff Current
VCB = 30 Vdc
2N2432
VCB = 25 Vdc
2N2432
VCB = 40 Vdc
2N2432A
VCB = 45 Vdc
Emitter-Collector Cutoff Current
2N2432A
VEC = 15 Vdc, VBC = 0 Vdc
Emitter-Base Cutoff Current
VEB = 15 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
Forward-Current Transfer Ratio (Inverted Connection)
IC = 0.2 mAdc, VCE = 5.0 Vdc
2N2432
2N2432A
Collector-Emitter Saturation Voltage
IC = 10 Vdc, IB = 0.5 mAdc
Emitter-Collector Offset Voltage
IE = 0 mAdc, IB = 200 µAdc
2N2432
2N2432A
IE = 0 mAdc, IB = 1.0 mAdc
2N2432
2N2432A
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz
Output Capacitance
VCB = 0 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
Input Capacitance
VEB = 0 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
ICBO
IECS
IEBO
hFE
hFE(inv)
VCE(sat)
VEC(ofs)
hfe
Cobo
Cibo
Min. Max. Unit
100
µAdc
10
ηAdc
100
µAdc
10
ηAdc
2.0
ηAdc
2.0
ηAdc
30
80
400
2.0
3.0
0.15
mVdc
0.5
0.4
mVdc
0.1
0.7
2.0
10
12
pF
12
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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