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| JAN2N708 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON SWITCHING TRANSISTOR | |||
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2N708 JANTX SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.5 mAdc, VCE = 1.0 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
Base-Emitter Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 1.0 mAdc, IB = 0.1 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHZ
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz
SWITCHING CHARACTERISTICS
Charge Storage Time
IC = IB1 = -IB21 = 10 mAdc
Turn-On Time
VBE â -2.0 Vdc; IC â 10 mAdc; IB1 â 3.0 mAdc
Turn-Off Time
IC â 10 mAdc; IB1 â 3.0 mAdc, IB2 â -1.0 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Cibo
ts
ton
toff
Min. Max. Unit
15
40
120
Vdc
0.40
0.80
Vdc
0.72
0.72
3.0
9.0
6.0
pÆ
9.0
pÆ
25
ηs
40
ηs
75
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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