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| JAN2N4399 Datasheet, PDF (2/2 Pages) Microsemi Corporation – PNP HIGH POWER SILICON TRANSISTOR | |||
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2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 15 Adc, VCE = 2.0 Vdc
2N4399
IC = 10 Adc, VCE = 2.0 Vdc
2N5745
IC = 30 Adc, VCE = 5.0 Vdc
2N4399
IC = 20 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
2N5745
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
2N4399
2N5745
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 15 Adc, IB = 1.5 Adc
2N4399
2N5745
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.67 Vdc, IC = 30 Adc
2N4399
VCE = 10 Vdc, IC = 20 Adc
Test 2
2N5745
VCE = 20 Vdc, IC = 10 Adc
Test 3
All Types
VCE = 40 Vdc, IC = 3.0 Adc
Test 4
All Types
VCE = 50 Vdc, IC = 600 mAdc
2N4399
VCE = 60 Vdc, IC = 600 mAdc
2N5745
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Min. Max. Unit
40
425
15
60
15
60
5.0
5.0
0.55
0.75
Vdc
1.0
1.7
1.8
Vdc
2.0
4.0
40
40
425
1000
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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