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| JAN2N3737 Datasheet, PDF (2/5 Pages) Microsemi Corporation – NPN SILICON SWITCHING TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
OFF CHARACTERTICS
Collector- Emitter Cutoff Current
VCE = 30Vdc, VEB = 2.0Vdc
ICEX
VCE = 30Vdc, VEB = 2.0Vdc TA = +150°C
Emitter-Base Cutoff Current
VEB = 5.0Vdc
IEBO
VEB = 4.0Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10mAdc, VCE = 1.0Vdc
IC = 150mAdc, VCE = 1.0Vdc
IC = 500mAdc, VCE = 1.0Vdc
hFE
IC = 1.0Adc, VCE = 1.5Vdc
IC = 1.5Adc, VCE = 5.0Vdc
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 150mAdc, IB = 15.0mAdc
IC = 500mAdc, IB = 50.0mAdc
IC = 1.0Adc, IB = 100mAdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 150mAdc, IB = 15.0mAdc
IC = 500mAdc, IB = 50.0mAdc
IC = 1.0Adc, IB = 100mAdc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 100MHz
|hfe|
Delay Response
IC = 1.0Adc, VBE = 2Vdc, IB2= 100mA
td
VCC = 30Vdc
Turn-Off Time
IC = 1.0Adc, IB1 = IB2 = 100mAdc, VCC = 30Vdc
toff
Rise Time
IC = 1.0Adc, VBE = 2Vdc, VCC = 30Vdc
tr
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ⤠f ⤠1.0MHz
Cobo
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100 kHz ⤠f ⤠1.0MHz
Cibo
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ⤠2.0%
T4-LDS-0173 Rev. 1 (101069)
Min.
35
40
40
20
20
2.5
Max.
Unit
200
nAdc
250
μAdc
10
μAdc
100
nAdc
150
80
0.2
0.3
Vdc
0.5
0.9
0.8
1.0
Vdc
1.2
1.4
6.0
8
ηs
60
ηs
40
ηs
9
pF
80
pF
Page 2 of 5
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