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| JAN2N2222A Datasheet, PDF (2/9 Pages) ON Semiconductor – Small Signal Switching Transistor | |||
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2N2222A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC
SYMBOL
Collector - Emitter Breakdown Voltage (1)
V(BR)CEO
( IC = 10 mA dc, IB = 0 )
Collector - Base Breakdown Voltage (1)
V(BR)CBO
( IC = 10 µAdc, IE = 0 )
Emitter - Base Breakdown Voltage (1)
V(BR)EBO
( IE = 10 µAdc, IC = 0 )
Collector - Emitter Cutoff Current
ICES
( VCE = 50 Vdc, VBE(off) = 0 V )
Collector - Base Cutoff Current
ICBO
( VCB = 60 Vdc, IE = 0 )
( VCB = 60 Vdc, IE = 0, TA = 150 °C )
Emitter - Base Cutoff Current
IEBO
( VEB = 4 Vdc )
ON CHARACTERISTIC
DC Current Gain
( IC = 100 µA dc, VCE = 10 Vdc )
( IC = 1 mA dc, VCE = 10 Vdc )
( IC = 10 mA dc, VCE = 10 Vdc )
( IC = 150 mA dc, VCE = 10 Vdc ) (1)
( IC = 500 mA dc, VCE = 10 Vdc ) (1)
( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55°C )
Collector - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc ) (1)
( IC = 500 mAdc, IB = 50 mAdc ) (1)
Base - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc ) (1)
( IC = 500 mAdc, IB = 50 mAdc ) (1)
SYMBOL
hFE
VCE(sat)
VBE(sat)
MIN
MAX
UNIT
50
Vdc
75
Vdc
6
Vdc
50
nAdc
10
nAdc
10
µAdc
10
nAdc
MIN
MAX
UNIT
50
75
325
100
100
300
30
35
0.3
Vdc
1.0
Vdc
0.6
1.2
Vdc
2.0
Vdc
1. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)
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