HUM2001 Datasheet, PDF (2/4 Pages) Microsemi Corporation – PIN DIODE High Power Stud

HUM2001 – HUM2020
®
TM
PIN DIODE
High Power Stud
RoHS Compliant Versions Available
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter
Symbol Conditions
Total Capacitance
C_T
V_R = 100V, F = 1 MHz
Series Resistance
R_S
I_F = 500 mA, F = 4 MHz
Carrier Lifetime
T_L
I_F = 10 mA/100 V
Reverse Current
I_R
V_R = Voltage rating
Parallel Resistance
R_P
f = 10MHz, V_R = 100V
Forward Voltage
V_F
I_F = 500mA
MIN.
10
200
TYPICAL
3.4
0.1
30
MAX.
4.0
0.2
10
0.85
1.0
Units
pF
Ohms
μs
μA
kOhms
V
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Parameter
Symbol
Average Power Dissipation
P_D
Non-Repetitive Sinusoidal Surge Current (8.3 ms)
I
Storage Temperature Range
Operating Temperature Range
Thermal resistance Junction-to Case
“C” Stud Only
T_STG
T_OP
R_θJC
Limits
13
100
-65 to + 175
-65 to + 175
7.5
Units
W
A
°C
°C
°C/W
Copyright  2006
Rev: 2009-05-14
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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