HSMBJLCR60 Datasheet, PDF (2/2 Pages) Microsemi Corporation – LOW CAPACITANCE RECTIFIER

SCOTTSDALE DIVISION
HSMBJLCR60, e3
LOW CAPACITANCE RECTIFIER
Peak Power
(Single Pulse)
Average
Power
GRAPHS
T_L – Lead Temperature – ^oC
FIGURE 2
t – Time – ms
FIGURE 3
SCHEMATIC APPLICATIONS
A typical low capacitance TVS device configuration is shown in Figure 4 when used with a separate rectifier to maintain low capacitance. As
shown, an additional low capacitance rectifier diode is used in parallel in the same polarity direction as the TVS. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode within the TVS and
also provide a low voltage conducting direction. This added rectifier diode such as the HSMBJLCR60 is of similar low capacitance as the TVS
and also has a higher reverse voltage rating than the TVS clamping voltage V_C. The unidirectional configuration in Figure 4 will result in twice the
capacitance of the HSMBJSACxxx series of low capacitance TVSs that are rated at 30 pF maximum. This results in a total of 60 pF maximum in
this parallel configuration since the HSMBJLCR60 is also the same capacitance value of 30 pF.
HSMBJSACxxx
(low capacitance TVS)
HSMBJLCR60
Low Capacitance
Rectifier
PACKAGE
DIMENSIONS
FIGURE 4
Unidirectional configuration of
Low Capacitance TVS (such as
the HSMBJSAC5.0-50 series) and
a separate HSMBJLCR60 rectifier
in parallel)
DIMENSIONS
INCHES MILLIMETER
DI
S
M MIN MAX MIN MA
X
A .073 .087 1.85 2.2
1
B .160 .180 4.06 4.5
7
C .130 .155 3.30 3.9
4
D .205 .220 5.21 5.5
9
E .075 .130 1.91 3.3
0
F .030 .060 .76 1.5
2
G .006 .016 .15 .41
NOTE: Dimension E
exceeds the JEDEC outline
in height as shown
Copyright © 2005
9-12-2005 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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