GC2510 Datasheet, PDF (2/3 Pages) Microsemi Corporation – POWER GENERATION Step Recovery Diodes

GC2510 – GC2546
TM
®
POWER GENERATION
Step Recovery Diodes
RoHS Compliant
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model Number
V_b(V)
I_R=10μA
(Min)
C_j(pF)¹
@-6V
T_L(ns)²
(Min)
T_T(ps)
(Typ)
R_s(Ω)³
@25 mA
(Max)
GC2510
GC2511
GC2512
GC2513
GC2514
GC2515
GC2516
GC2520
GC2521
GC2522
GC2523
GC2524
GC2525
GC2526
GC2530
GC2531
GC2532
GC2533
GC2534
GC2535
GC2536
GC2540
GC2541
GC2542
GC2543
GC2544
GC2545
GC2546
15
0.2-0.4
8
15
0.4-0.6
8
15
0.6-0.8
8
15
0.8-1.0
8
15
1.0-1.4
8
15
1.4-2.0
8
15
2.0-3.0
8
20
0.2-0.4
11
20
0.4-0.6
11
20
0.6-0.8
11
20
0.8-1.0
11
20
1.0-1.4
11
20
1.4-2.0
11
20
2.0-3.0
11
30
0.2-0.4
17
30
0.4-0.6
17
30
0.6-0.8
17
30
0.8-1.0
17
30
1.0-1.4
17
30
1.4-2.0
17
30
2.0-3.0
17
40
0.2-0.4
21
40
0.4-0.6
21
40
0.6-0.8
21
40
0.8-1.0
21
40
1.0-1.4
21
40
1.4-2.0
21
40
2.0-3.0
21
60
1.2
60
1.0
60
0.7
60
0.5
60
0.4
60
0.3
60
0.25
70
1.0
70
0.7
70
0.6
70
0.5
70
0.4
70
0.3
70
0.25
100
0.8
100
0.6
100
0.5
100
0.4
100
0.3
100
0.25
100
0.2
150
0.8
150
0.6
150
0.5
150
0.4
150
0.3
150
0.25
150
0.2
1. Junction capacitance is measure at 1 MHz.
2. Carrier lifetime is measure at I_F = 10mA, I_R = 6mA .
3. Series resistance is measure using a transmission loss technique @ 1 GHz.
4. Thermal resistance is measure using pulsed conditions while measuring forward voltage drop
across the diode mounted in an infinite heat sink.
P¹(˚C/W)⁴
(Max)
125
100
100
75
75
60
60
100
75
75
75
75
60
60
75
60
60
60
60
50
50
60
50
50
50
50
40
40
Notes:
Copyright  2007
Rev.: 2009-02-03
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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