ELCR80 Datasheet, PDF (2/2 Pages) Microsemi Corporation – LOW CAPACITANCE RECTIFIER

SCOTTSDALE DIVISION
ELCR80, e3
LOW CAPACITANCE RECTIFIER
GRAPHS
Peak Power
(Single Pulse)
Average
Power
T_L – Lead Temperature – ^oC
FIGURE 2
t – Time – ms
FIGURE 3
SCHEMATIC APPLICATIONS
A typical low capacitance TVS device configuration is shown in Figure 4 when used with a separate rectifier to maintain low capacitance. As
shown, an additional low capacitance rectifier diode is used in parallel in the same polarity direction as the TVS. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode within the TVS and
also provide a low voltage conducting direction. This added rectifier diode such as the ELCR80 is of similar low capacitance as the TVS and also
has a higher reverse voltage rating than the TVS clamping voltage V_C. The unidirectional configuration in Figure 4 will result in twice the
capacitance of the LCE6.5 – 170A series of low capacitance TVSs that are rated at 100 pF maximum. This results in a total of 200 pF maximum
in this parallel configuration since the ELCR80 is also the same capacitance value of 100 pF maximum.
LCExxx
(low capacitance TVS)
ELCR80
Low Capacitance
Rectifier
PACKAGE
DIMENSIONS
FIGURE 4
Unidirectional configuration of
Low Capacitance TVS (such as
the LCE6.5-170A series) and
a separate ELCR80 rectifier
in parallel)
Copyright © 2005
9-12-2005 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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