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DRF1203_11 Datasheet, PDF (2/4 Pages) Microsemi Corporation – MOSFET Driver Hybrid
Driver Output Characteristics
Symbol
Parameter
Cout
Output Capacitance
Rout
Output Resistance
Lout
Output Inductance
FMAX
Operating Frequency CL = 3000nF + 50Ω
FMAX
Operating Frequency RL = 50Ω
Driver Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case
RθJHS
Thermal Resistance Junction to Heat Sink
TJSTG
Storage Temperature
PDJHS
PDJC
Maximum Power Dissipation @ TSINK = 25°C
Total Power Dissipation @ TC = 25°C
MOSFET Absolute Maximum Ratings
Symbol
Parameter
BVDSS
ID
RDS(on)
Tjmax
Drain Source Voltage
Continuous Drain Current THS = 25°C
Drain-Source On State Resistance
Operating Temperature
MOSFET Dynamic Characteristics
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
MOSFET Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case
RθJHS
Thermal Resistance Junction to Heat Sink
TJSTG
Storage Temperature
PDHS
Maximum Power Dissipation @ TSINK = 25°C
PDC
Total Power Dissipation @ TC = 25°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DRF1203
Min
Typ Max Unit
2500
pF
.8
Ω
3
nH
30
MHz
50
Min
Typ
Max
1.5
2.5
-55 to 150
60
100
Unit
°C/W
°C
W
Min
Typ
Max
Unit
1000
V
12
A
0.90
Ω
175
°C
Min
Typ
Max
Unit
2000
165
pF
75
Min
Type Max Unit
0.53
0.141
°C/W
-55 to 150
°C
1060
W
2830
Figure 1, DRF1203 Simplified Circuit Diagram
The Simplified DRF1203 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), their contribution
to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows
optimal gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the
Anti-Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. The IN pin is the input for
the control signal and is applied to a Schmitt Trigger. Both the FN and IN pins are referenced to the Kelvin ground (SG.) The signal is then ap-
plied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for the ring abatement. The
power drivers provide high current to the gate of the MOSFETS.