DRF1202 Datasheet, PDF (2/4 Pages) Microsemi Corporation – MOSFET Driver Hybrid

MOSFET Absolute Maximum Ratings
Symbol
Parameter
BV_DSS
I_D
R_DS(on)
Drain Source Voltage
Continuous Drain Current T_HS = 25°C
Drain-Source On State Resistance
Dynamic Characteristics
Symbol
Parameter
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance Junction to Case
R_θJHS
Thermal Resistance Junction to Heat Sink
T_JSTG
Storage Temperature
P_D
Maximum Power Dissipation @ T_SINK = 25°C
P_DC
Total Power Dissipation @ T_C = 25°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DRF1202
Min
Typ
Max
Unit
500
V
50
A
0.25
Ω
Min
Typ
Max
Unit
2000
165
pF
75
Ratings
0.10
0.27
-55 to 150
1180
3100
Unit
°C/W
°C
W
Figure 1, DRF1202 Simplified Circuit Diagram
The Simplified DRF1202 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), their contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-
Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. The IN pin is the input for the
control signal and is applied to a Schmitt Trigger. Both the FN and IN pins are referenced to Kelvin ground (SG.) The signal is then applied to
the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for the ring abatement. The power
drivers provide high current to the gate of the MOSFETS.