DRF1200_11 Datasheet, PDF (2/4 Pages) Microsemi Corporation – MOSFET Driver Hybrid

Driver Output Characteristics
Symbol
Parameter
C_out
Output Capacitance
R_out
Output Resistance
L_out
Output Inductance
F_MAX
Operating Frequency CL = 3000nF + 50Ω
F_MAX
Operating Frequency RL = 50Ω
Driver Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJHS
T_JSTG
P_DJHS
P_DJC
Thermal Resistance Junction to Case
Thermal Resistance Junction to Heat Sink
Storage Temperature
Maximum Power Dissipation @ T_SINK = 25°C
Total Power Dissipation @ T_C = 25°C
MOSFET Absolute Maximum Ratings
Symbol
Parameter
BV_DSS
I_D
R_DS(on)
T_jmax
Drain Source Voltage
Continuous Drain Current T_HS = 25°C
Drain-Source On State Resistance
Operating Temperature
MOSFET Dynamic Characteristics
Symbol
Parameter
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
MOSFET Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance Junction to Case
R_θJHS
Thermal Resistance Junction to Heat Sink
T_JSTG
Storage Temperature
P_DHS
Maximum Power Dissipation @ T_SINK = 25°C
P_DC
Total Power Dissipation @ T_C = 25°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DRF1200
Min
Typ Max Unit
2500
pF
.8
Ω
3
nH
30
MHz
50
Min
Typ
Max
1.5
2.5
-55 to 150
60
100
Unit
°C/W
°C
W
Min
Typ
Max Unit
1000
V
13
A
0.90
Ω
175
°C
Min
Typ
Max Unit
2000
165
pF
75
Min
Typ
Max
0.095
0.25
-55 to 150
600
1580
Unit
°C/W
°C
W
Figure 1, DRF1200 Simplified Circuit Diagram
The Simplified DRF1200 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-
Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are
referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.