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| APTM50AM38FTG Datasheet, PDF (2/6 Pages) Microsemi Corporation – Phase leg MOSFET Power Module | |||
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APTM50AM38FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
3
VGS = ±30 V, VDS = 0V
200 µA
1000
38 45 mâ¦
5V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 90A
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2â¦
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2â¦
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2â¦
Min Typ Max Unit
11.2
2.4
nF
0.18
246
66
nC
130
18
35
ns
87
77
1510
µJ
1452
2482
µJ
1692
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 90A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 90A
VR = 333V
diS/dt = 200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ⤠- 90A di/dt ⤠700A/µs VR ⤠VDSS Tj ⤠150°C
Min Typ Max Unit
90 A
67
1.3 V
15 V/ns
233
499
ns
3.8
µC
11.4
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