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| APTM10TDUM09PG Datasheet, PDF (2/6 Pages) Microsemi Corporation – Triple dual common source MOSFET Power Module | |||
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APTM10TDUM09PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain â Source on Resistance
Gate Threshold Voltage
Gate â Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C
VGS = 0V,VDS = 80V Tj = 125°C
VGS = 10V, ID = 69.5A
VGS = VDS, ID = 2.5mA
2
VGS = ±30 V, VDS = 0V
100 µA
500
9 10 mâ¦
4V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate â Source Charge
Qgd Gate â Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 50V
ID =139A
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 139A
RG = 5â¦
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5â¦
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5â¦
Min Typ Max Unit
9875
3940
pF
1470
350
60
nC
180
35
70
ns
95
125
552
µJ
604
608
µJ
641
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 139A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 139A
VR = 66V
diS/dt = 100A/µs
Tj = 25°C
Tj = 25°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ⤠- 139A di/dt ⤠700A/µs VR ⤠VDSS Tj ⤠150°C
Min Typ Max Unit
139
100
A
1.3 V
5 V/ns
270
ns
2.9
µC
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2â6
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