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APTM100DA33T1G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Boost chopper MOSFET Power Module
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APTM100DA33T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 25°C
Tj = 125°C
100 µA
500
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 18A
330 396 mΩ
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 2.5mA
VGS = ±30 V
34 5V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 18A
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 2.2Ω
Min Typ Max Unit
7868
825
pF
104
305
55
nC
145
44
40
ns
150
38
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
IF = 30A
1200
V
Tj = 25°C
Tj = 125°C
100
500
µA
Tc = 80°C
30
A
2.6 3.1
3.2
V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
300
IF = 30A
VR = 800V
Tj = 125°C
380
ns
di/dt =200A/µs Tj = 25°C
360
nC
Tj = 125°C
1700
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC Junction to Case Thermal Resistance
Transistor
Diode
0.32 °C/W
1.2
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
2500
-40
V
150
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
-40
-40
M4 2.5
125 °C
100
4.7 N.m
Wt Package Weight
80 g
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