English
Language : 

APTGT75DA170D1G Datasheet, PDF (2/4 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT Power Module
◁
APTGT75DA170D1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1700V
250 µA
VGE = 15V
IC = 75A
Tj = 25°C
Tj = 125°C
2.0 2.4
V
2.4
VGE = VCE , IC = 3mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
6800
277
pF
220
VGE=±15V, IC=75A
VCE=900V
0.85
µC
Inductive Switching (25°C)
280
VGE = 15V
VBus = 900V
IC = 75A
80
ns
850
RG = 18Ω
120
Inductive Switching (125°C)
300
VGE = 15V
VBus = 900V
IC = 75A
RG = 18Ω
100
1000
ns
200
VGE = 15V
VBus = 900V
IC = 75A
RG = 18Ω
Tj = 125°C
Tj = 125°C
27
24.5
mJ
VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C
300
A
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1700
V
IRM Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
250
µA
500
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Err Reverse Recovery Energy
IF = 75A
IF = 75A
VR = 900V
di/dt =800A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
75
A
1.8 2.2 V
1.9
410
ns
520
19
µC
31
9
mJ
17.5
www.microsemi.com
2–4
 ▷