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APTGT50A170TG Datasheet, PDF (2/5 Pages) Microsemi Corporation – Phase leg Trench + Field Stop IGBT Power Module
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APTGT50A170TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
250 µA
VGE = 15V
IC = 50A
Tj = 25°C
Tj = 125°C
2.0 2.4 V
2.4
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10Ω
VGE = 15V
VBus = 900V
IC = 50A
RG = 10Ω
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
4400
180
pF
150
370
40
ns
650
180
400
50
800
ns
300
16
mJ
15
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
Test Conditions
Min Typ Max Unit
1700
V
VR=1700V
Tj = 25°C
Tj = 125°C
250
µA
500
Tc = 80°C
50
A
IF = 50A
IF = 50A
VR = 900V
di/dt =800A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.8 2.2 V
1.9
385
ns
490
14
µC
23
6
mJ
12
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