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APTGT35H120T1G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Full - Bridge Fast Trench + Field Stop IGBT� Power Module
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APTGT35H120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
250
µA
500
VGE = 15V
IC = 35A
Tj = 25°C
Tj = 125°C
1.7 2.1 V
2.0
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
2.5
nF
0.15
Inductive Switching (25°C)
90
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27Ω
30
420
ns
70
Inductive Switching (125°C)
90
VGE = ±15V
VBus = 600V
IC = 35A
50
ns
520
RG = 27Ω
90
VGE = ±15V
VBus = 600V
Tj = 125°C
3.5
IC = 35A
RG = 27Ω
Tj = 125°C
4.1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
250
µA
500
IF DC Forward Current
VF Diode Forward Voltage
IF = 35A
Tc = 80°C
Tj = 25°C
Tj = 125°C
35
A
1.6 2.1 V
1.6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
Tj = 25°C
170
ns
Tj = 125°C
280
IF = 35A
VR = 600V
Tj = 25°C
3.5
µC
di/dt =1500A/µs Tj = 125°C
7
Tj = 25°C
1.4
mJ
Tj = 125°C
2.7
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