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APTGT300DA170D3G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT Power Module
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APTGT300DA170D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1700V
3 mA
VGE = 15V
IC = 300A
Tj = 25°C
Tj = 125°C
2.0 2.5
V
2.4
VGE = VCE , IC = 12 mA
5.2 5.8 6.4 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn On Energy
Eoff Turn Off Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 25V
f = 1MHz
27
nF
0.9
VGE=±15V, IC=300A
VCE=900V
3.5
µC
Inductive Switching (25°C)
280
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.7Ω
80
850
ns
120
Inductive Switching (125°C)
300
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.7Ω
100
1000
ns
200
VGE = ±15V
Tj = 25°C
71
VBus = 900V Tj = 125°C
105
IC = 300A
Tj = 25°C
64
mJ
RG = 4.7Ω
Tj = 125°C
94
VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C
1200
A
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
1700
V
750
µA
1000
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Err Reverse Recovery Energy
IF = 300A
IF = 300A
VR = 900V
di/dt =3500A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
A
1.8 2.2 V
1.9
385
ns
490
76
µC
124
35
mJ
70
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