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APTGT225DU170G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Dual common source Trench + Field Stop IGBT Power Module
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APTGT225DU170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
500 µA
VGE = 15V
IC = 225A
Tj = 25°C
Tj = 125°C
2.0 2.4 V
2.4
VGE = VCE , IC = 4mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
20
0.8
nF
0.66
Inductive Switching (25°C)
370
VGE = 15V
VBus = 900V
IC = 225A
40
ns
650
RG = 3.3Ω
180
Inductive Switching (125°C)
400
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω
50
800
ns
300
VGE = 15V
VBus = 900V
Tj = 125°C
72
IC = 225A
RG = 3.3Ω
Tj = 125°C
70.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
1700
V
500
µA
750
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 225A
IF = 225A
VR = 900V
di/dt =2400A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
225
A
1.8 2.2 V
1.9
385
ns
490
57
µC
93
26
mJ
52
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