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APTGT20TL601G Datasheet, PDF (2/6 Pages) Microsemi Corporation – Three level inverter Trench + Field Stop IGBT Power Module
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APTGT20TL601G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 20A
Tj = 25°C
Tj = 150°C
1.5 1.9 V
1.7
VGE = VCE , IC = 300µA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
300 nA
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
RthJC Junction to Case Thermal Resistance
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1100
70
pF
35
VGE=±15V, IC=20A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12Ω
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
0.2
µC
110
45
ns
200
40
120
50
ns
250
60
0.11
mJ
0.2
0.5
mJ
0.7
100
A
2.4 °C/W
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