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APTGT150SK120D1G Datasheet, PDF (2/4 Pages) Microsemi Corporation – Buck chopper Trench + Field Stop IGBT Power Module
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APTGT150SK120D1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
250 µA
VGE = 15V
IC = 150A
Tj = 25°C
Tj = 125°C
1.7 2.1
V
2.0
VGE = VCE , IC = 6 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
10.8
0.56
nF
0.5
VGE=±15V, IC=150A
VCE=600V
1.4
µC
Inductive Switching (25°C)
250
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
90
550
ns
130
Inductive Switching (125°C)
300
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
100
ns
650
180
VGE = ±15V
VBus = 600V
Tj = 125°C
11
IC = 150A
RG = 4.7Ω
Tj = 125°C
26
mJ
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
600
A
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
250
500
µA
IF DC Forward current
Tc = 80°C
150
A
VF Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 25°C
Tj = 125°C
1.6 2.1 V
1.6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Err Reverse Recovery Energy
Tj = 25°C
250
ns
Tj = 125°C
350
IF = 150A
VR = 600V
di/dt =3000A/µs
Tj = 25°C
Tj = 125°C
15
29
µC
Tj = 25°C
7
mJ
Tj = 125°C
12
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