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APTGL90DSK120T3G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Dual Buck chopper Trench + Field Stop IGBT4 Power module
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APTGL90DSK120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE = 0V ; VCE = 1200V
VGE =15V
Tj = 25°C
IC = 75A
Tj = 150°C
250 µA
1.85 2.25
V
2.25
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 3 mA
VGE = 20 V, VCE = 0V
5 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
4.4
0.29
nF
0.24
VGE= ±15V ; VCE=600V
IC=75A
0.57
µC
Inductive Switching (25°C)
130
VGE = ±15V
VBus = 600V
IC = 75A
RG = 2.2Ω
20
ns
300
45
Inductive Switching (150°C)
150
VGE = ±15V
VBus = 600V
IC = 75A
RG = 2.2Ω
35
350
ns
80
VGE = ±15V TJ = 25°C
3.3
mJ
VBus = 600V TJ = 150°C
8.5
IC = 75A
TJ = 25°C
4.2
RG = 2.2Ω
TJ = 150°C
7.2
mJ
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
300
A
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 100A
IF = 150A
IF = 100A
1200
V
Tj = 25°C
Tj = 125°C
100
µA
500
Tc = 80°C
100
A
2.4 3
2.7
V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
385
IF = 100A
VR = 800V
Tj = 125°C
480
ns
di/dt =200A/µs Tj = 25°C
1055
nC
Tj = 125°C
5240
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