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APTGL475A120D3G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Phase leg Trench + Field Stop IGBT4 Power Module
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APTGL475A120D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
5 mA
VGE = 15V
IC = 400A
Tj = 25°C
Tj = 125°C
1.8 2.2
V
2.2
VGE = VCE , IC = 15mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
24.6
1.62
nF
1.38
VGE= -8V / 15V ; VCE=600V
IC=400A
2.3
µC
Inductive Switching (25°C)
200
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1Ω
40
ns
400
70
Inductive Switching (150°C)
220
VGE = ±15V
VCE = 600V
IC = 400A
50
ns
500
RG = 1Ω
80
VGE = ±15V
VCE = 600V
TJ = 150°C
33
mJ
IC = 400A
RG = 1Ω
TJ = 150°C
42
mJ
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
1600
A
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
IRRM Maximum Reverse Leakage Current
IF DC Forward Current
VF Diode Forward Voltage
Test Conditions
VR=1200V
IF = 400A
VGE = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Err Reverse Recovery Energy
IF = 400A
VR = 600V
di/dt = 7000A/µs
Min Typ Max Unit
1200
V
Tj = 25°C
Tj = 150°C
250 µA
2000
TC = 80°C
400
A
Tj = 25°C
Tj = 150°C
1.7 2.2
V
1.65
Tj = 25°C
155
ns
Tj = 150°C
300
Tj = 25°C
37.2
µC
Tj = 150°C
78
Tj = 25°C
16
mJ
Tj = 150°C
32
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